Radiation-induced effects in silicon
Results of complex studies of the structural properties of silicon irradiated with light ions of megaelectronvolt energies by fluences greater than 10¹⁶ cm⁻² are presented. It was found that during irradiation under conditions of large energy release in thin layer of crystal, the favorable condition...
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| Date: | 2019 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2019
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| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/195210 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Radiation-induced effects in silicon / ИОФамилия // Problems of atomic science and technology. — 2019. — № 5. — С. 44-48. — Бібліогр.: 20 назв. — англ. |