Thin Surface Layer of Plasma Treated Polyethylene

This paper reports on the effect of argon plasma on the high density polyethylene surface. The aim is to alter the surface in a manner and scale resulting in a stronger metal/polymer valence. The specimens are exposed to the direct current discharge, the irradiation time and power being variables. E...

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Bibliographic Details
Date:2008
Main Authors: Kotal, V., Stopka, P., Sajdl, P., Svorcik, V.
Format: Article
Language:English
Published: Інститут проблем міцності ім. Г.С. Писаренко НАН України 2008
Series:Проблемы прочности
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/48450
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Thin Surface Layer of Plasma Treated Polyethylene / V. Kotal, P. Stopka, P. Sajdl, V. Svorcik // Проблемы прочности. — 2008. — № 1. — С. 97-100. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:This paper reports on the effect of argon plasma on the high density polyethylene surface. The aim is to alter the surface in a manner and scale resulting in a stronger metal/polymer valence. The specimens are exposed to the direct current discharge, the irradiation time and power being variables. Electron paramagnetic resonance and X-ray photoelectron spectroscopy (EPR and XPS, respectively) are employed to determine the plasma effect. The surface wettability is studied by goniometry. The plasma treatment leads to radical generation and activation of such agents as oxygen, thus the surface wettability is significantly increased. The evolution ofthe treated surface in different media is studied. The influence of an increased oxygen concentration and the storage medium on the concentration gradient within the surface monolayers is proved. The EPR data show a gradual and very slow decrease in the number of radicals present on the treated surface after 2000 h. Also evidence is given for partial dissolution of the treated surface in water.