Фотопровідність кремнію в умовах магнітного впливу
It is shown that the action of magnetic fields (MF) of different nature (constant and variable MF and a microwave superhigh-frequency field) changes the relaxation kinetics of photoconductivity (PC) in silicon crystals. For an explanation of the obtained results, the mechanism, according to which di...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
Видавничий дім "Академперіодика" НАН України
2008
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| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/6107 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Фотопровідність кремнію в умовах магнітного впливу / В.А. Макара, Л.П. Стебленко, А.О. Подолян, А.М. Курилюк, Ю.Л. Кобзар, С.М. Науменко // Доп. НАН України. — 2008. — № 10. — С. 91-95. — Бібліогр.: 13 назв. — укр. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | It is shown that the action of magnetic fields (MF) of different nature (constant and variable MF and a microwave superhigh-frequency field) changes the relaxation kinetics of photoconductivity (PC) in silicon crystals. For an explanation of the obtained results, the mechanism, according to which differences in the relaxation times of PC are related to structural changes in the surface layer of Si that are stimulated by the magnetic influence, is offered. |
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