Pressure-induced transformations during annealing of silicon implanted with oxygen
Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-...
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| Date: | 2006 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2006
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| Series: | Физика и техника высоких давлений |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/70257 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ. |