Моделювання процесів релаксаційної оптики
The results of modelling the mixed processes of Relaxational Optics using nonlinear physical and chemical methods are analyzed. The processes of the interaction laser radiation with semiconductors (indium antimonide, indium arsenide and silicon) were selected as objects of modelling. Good agreement...
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| Date: | 2011 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
Західний науковий центр НАН України і МОН України
2011
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| Series: | Праці наукового товариства ім. Шевченка |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/75113 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Моделювання процесів релаксаційної оптики / П. Трохимчук, М. Пеньковський // Праці Наукового товариства ім. Шевченка. — Л., 2011. — Т. 8: Фізичний збірник. — С. 198-204. — Бібліогр.: 14 назв. — укр. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The results of modelling the mixed processes of Relaxational Optics using nonlinear physical and chemical methods are analyzed. The processes of the interaction laser radiation with semiconductors (indium antimonide, indium arsenide and silicon) were selected as objects of modelling. Good agreement between experimental and modelling data has been reached. |
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