Diffusion Processes in Ti–Si Systems during Silicide Formation
Two methods of creation of the TiSi₂(C54) stable phase are reviewed, and their comparison is considered. The formation of the structure of TiSi₂(C54) nanosize films on monocrystalline Si is studied. As shown, the TiSi₂(C54) formation is carried out faster (≅ 55 s) by low-energy thermion deposition (...
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| Date: | 2013 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут металофізики ім. Г.В. Курдюмова НАН України
2013
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| Series: | Наносистеми, наноматеріали, нанотехнології |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/75923 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Diffusion Processes in Ti–Si Systems during Silicide Formation / S. E. Bogdanov, G. Beddies, M.Daniel, Yu.N. Makogon // Наносистеми, наноматеріали, нанотехнології: Зб. наук. пр. — К.: РВВ ІМФ, 2013. — Т. 11, № 2. — С. 295-302. — Бібліогр.: 7 назв. — анг. |