Peculiarities of fluorescence of thin organic films in the field of soft X-ray radiation
The paper presents the results of experimental study on the X-ray fluorescence of new organic films manufactured on the base of polystyrene with activating dopes of P-Terphenyl 1.0%, 1.4-Di-(2-(5-Phenyloxazolyl))- Benzene (POPOP) 0.02% and compounds containing Sn atoms. The fluorescent films, 18 a...
Saved in:
| Date: | 2004 |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2004
|
| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/79382 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | НазваниеPeculiarities of fluorescence of thin organic films in the field of soft X-ray radiation / A.N. L’vov, V.G. Senchishin, N.G. Shulika, V.I. Skibin, E.G. Taller, N.I. Voronkina, Yu.G. Zaleskiy // Вопросы атомной науки и техники. — 2004. — № 2. — С. 171-173. — Бібліогр.: 3 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The paper presents the results of experimental study on the X-ray fluorescence of new organic films
manufactured on the base of polystyrene with activating dopes of P-Terphenyl 1.0%, 1.4-Di-(2-(5-Phenyloxazolyl))-
Benzene (POPOP) 0.02% and compounds containing Sn atoms. The fluorescent films, 18 and 20 µm thick,
containing Sn 8% by mass are manufactured and their properties are studied. Measurements were carried out at the
special vacuum installation with a low-voltage electron beam. The braking X-ray radiation was excited on the
tungsten target in the energy range from 0.25 to 2.5 keV and the beam current of 0.1 mA. It is shown that the given
fluorescence material reveals the sensitivity to the X-ray continuum up to the energy of 250 eV without applying a
low-noise amplifying device. In this case the specific fluorescence is significantly higher than the respective value
for CsI(Tl) single crystal that we have taken as a standard. Addition of Sn ions in the film structure leads to the
increase of the film sensitivity at the low-energy edge of the energy range being studied. There is a discussion about
possible application of above-mentioned films in the accelerator technique, plasma physics, X-ray microscopy and
other fields where the recording of soft X-ray radiation is required. |
|---|