Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition
One of peculiar features of the IBAD technology consists in that the damage level and concentration of implanted ions are distributed nonuniformly in the depth of deposited material. The calculations, we have done earlier [1], showed that the highest degree of nonequilibrium is realized in the f...
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irk-123456789-803412015-04-17T03:02:01Z Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition Guglya, A. Litvinenko, M. Marchenko, Y. Vasilenko, R. Краткие сообщения One of peculiar features of the IBAD technology consists in that the damage level and concentration of implanted ions are distributed nonuniformly in the depth of deposited material. The calculations, we have done earlier [1], showed that the highest degree of nonequilibrium is realized in the first 50 nm of a coating. However, just in this thickness the nucleation and formation of the material structure is observed. The peculiarities of chromium coating formation without assisted irradiation and under bombarding with nitrogen ions having the energy of 30 keV were studied. The rates of chromium deposition were low, 0,05…0,1 nm/s. During the experiment the vacuum was maintained at a level of 4·10⁻³ Pa and was determined, in main, by the content of nitrogen molecules arriving from the discharging chamber of the ion source. The thickness within the range from 3 to 10 nm was investigated. The results have shown that at the earliest stages of the film growth solely chromium nitride CrN is formed. Sizes of visible nuclei are in the range from 1 to 4 nm, and their density is 1…3·10¹²cm⁻² . As the film thickness increases, the nuclei are growing, then their coalescence occurs and a uniform coating is formed. Chromium deposition without irradiation, but at the same nitrogen pressure, resulted in formation of chromium hcp structure with the following crystallographic parameters: a = 0,315 nm; c = 0,492 nm. The grain size was 3…4 nm. After reaching the coating continuity, the hcp structure was transformed into the bcc structure with the parameter a = 0,261 nm. Проведено сравнительное исследование начальных стадий формирования хромового покрытия в условиях бомбардировки ионами азота с энергией 30 кэВ и без ассистированного облучения, но при повышенном содержании азота в рабочей камере. Скорости осаждения были выбраны небольшими – 0,05...0,1 нм/с. Вакуум в камере был на уровне 4•10⁻³ Па и определялся в основном азотом, который напускался в разрядную камеру ионного источника. Толщина исследуемых объектов была в интервале 3…10 нм. Результаты показали, что при ионной бомбардировке происходит образование нитрида хрома CrN, начиная с самых ранних стадий роста пленки. Размер видимых зародышей находится в диапазоне 1…4 нм, плотность – 3•10¹² см⁻². С увеличением толщины пленки происходит коалесценция малых зародышей, образование свободных зон и зарождение на них новой популяции зерен. Осаждение хрома без ионного облучения приводит к формированию ГПУ-структуры с параметрами решетки а=0,315 нм и с=0,492 нм. При достижении сплошности у пленки происходит трансформация ГПУ-структуры в ОЦК с параметром а=0,261 нм. Проведено порівняльне вивчення початкової стадії формування хромового покриття в умовах бомбардування іонами азоту з енергією 30 кеВ та без асистуючого опромінення, але при підвищеному тиску азоту. Швидкості осадження були підібрані невеликі – 0,05…0,1 нм/с. Вакуум у камері був на рівні 4·10⁻³ Па та обумовлювався азотом, який напускався в розрядову камеру іонного джерела. Товщина досліджених плівок – 3…10 нм. Результати показали, що при іонному бомбардуванні має місце створення нітриду хрому CrN починаючи з самих початкових стадій. Розмір зародків знаходиться у діапазоні 1…4 нм, щільність – 3·10¹² см⁻². Зі збільшенням товщини має місце коалесценція зародків, створення вільних зон та зародження на них нової популяції зерен. Осадження хрому без іонного опромінення призводить до формування ГПУ-структури хрому з параметрами гратки а=0,315 нм та с=0,492 нм. При появленні сполошної плівки має місце трансформування ГПУ-структури у ОЦК з параметром а=0,261нм. 2006 Article Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition / A. Guglya, M. Litvinenko, Y. Marchenko, R. Vasilenko // Вопросы атомной науки и техники. — 2006. — № 4. — С. 200-203. — Бібліогр.: 9 назв. — англ. 1562-6016 http://dspace.nbuv.gov.ua/handle/123456789/80341 621.384.6 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| language |
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| topic |
Краткие сообщения Краткие сообщения |
| spellingShingle |
Краткие сообщения Краткие сообщения Guglya, A. Litvinenko, M. Marchenko, Y. Vasilenko, R. Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition Вопросы атомной науки и техники |
| description |
One of peculiar features of the IBAD technology consists in that the damage level and concentration of implanted ions are
distributed nonuniformly in the depth of deposited material. The calculations, we have done earlier [1], showed that the highest
degree of nonequilibrium is realized in the first 50 nm of a coating. However, just in this thickness the nucleation and formation
of the material structure is observed. The peculiarities of chromium coating formation without assisted irradiation and under
bombarding with nitrogen ions having the energy of 30 keV were studied. The rates of chromium deposition were low, 0,05…0,1
nm/s. During the experiment the vacuum was maintained at a level of 4·10⁻³ Pa and was determined, in main, by the content of nitrogen
molecules arriving from the discharging chamber of the ion source. The thickness within the range from 3 to 10 nm was
investigated. The results have shown that at the earliest stages of the film growth solely chromium nitride CrN is formed. Sizes
of visible nuclei are in the range from 1 to 4 nm, and their density is 1…3·10¹²cm⁻²
. As the film thickness increases, the nuclei are
growing, then their coalescence occurs and a uniform coating is formed. Chromium deposition without irradiation, but at the
same nitrogen pressure, resulted in formation of chromium hcp structure with the following crystallographic parameters: a = 0,315 nm; c = 0,492 nm. The grain size was 3…4 nm. After reaching the coating continuity, the hcp structure was transformed
into the bcc structure with the parameter a = 0,261 nm. |
| format |
Article |
| author |
Guglya, A. Litvinenko, M. Marchenko, Y. Vasilenko, R. |
| author_facet |
Guglya, A. Litvinenko, M. Marchenko, Y. Vasilenko, R. |
| author_sort |
Guglya, A. |
| title |
Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition |
| title_short |
Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition |
| title_full |
Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition |
| title_fullStr |
Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition |
| title_full_unstemmed |
Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition |
| title_sort |
formation of thin film cr-n composites under ion bombardment at low rates of chromium deposition |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| publishDate |
2006 |
| topic_facet |
Краткие сообщения |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/80341 |
| citation_txt |
Formation of thin film Cr-N composites under ion bombardment at low rates of chromium deposition / A. Guglya, M. Litvinenko, Y. Marchenko, R. Vasilenko // Вопросы атомной науки и техники. — 2006. — № 4. — С. 200-203. — Бібліогр.: 9 назв. — англ. |
| series |
Вопросы атомной науки и техники |
| work_keys_str_mv |
AT guglyaa formationofthinfilmcrncompositesunderionbombardmentatlowratesofchromiumdeposition AT litvinenkom formationofthinfilmcrncompositesunderionbombardmentatlowratesofchromiumdeposition AT marchenkoy formationofthinfilmcrncompositesunderionbombardmentatlowratesofchromiumdeposition AT vasilenkor formationofthinfilmcrncompositesunderionbombardmentatlowratesofchromiumdeposition |
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2025-07-06T04:18:26Z |
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2025-07-06T04:18:26Z |
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| fulltext |
УДК 621.384.6
FORMATION OF THIN FILM Cr-N COMPOSITES UNDER ION BOM-
BARDMENT AT LOW RATES OF CHROMIUM DEPOSITION
A. Guglya, M. Litvinenko, Y. Marchenko, R. Vasilenko
NSC “Kharkov Institute of Physics and Technology”,
Institute of Solid State Physics, Materials Science and Technologies
Kharkov, Ukraine
One of peculiar features of the IBAD technology consists in that the damage level and concentration of implanted ions are
distributed nonuniformly in the depth of deposited material. The calculations, we have done earlier [1], showed that the highest
degree of nonequilibrium is realized in the first 50 nm of a coating. However, just in this thickness the nucleation and formation
of the material structure is observed. The peculiarities of chromium coating formation without assisted irradiation and under
bombarding with nitrogen ions having the energy of 30 keV were studied. The rates of chromium deposition were low, 0,05…0,1
nm/s. During the experiment the vacuum was maintained at a level of 4·10 3 Pa and was determined, in main, by the content of ni-
trogen molecules arriving from the discharging chamber of the ion source. The thickness within the range from 3 to 10 nm was
investigated. The results have shown that at the earliest stages of the film growth solely chromium nitride CrN is formed. Sizes
of visible nuclei are in the range from 1 to 4 nm, and their density is 1…3·1012cm-2. As the film thickness increases, the nuclei are
growing, then their coalescence occurs and a uniform coating is formed. Chromium deposition without irradiation, but at the
same nitrogen pressure, resulted in formation of chromium hcp structure with the following crystallographic parameters: a =
0,315 nm; c = 0,492 nm. The grain size was 3…4 nm. After reaching the coating continuity, the hcp structure was transformed
into the bcc structure with the parameter a = 0,261 nm.
INTRODUCTION
Computer simulation of the process of coating for-
mation with the use of the ion-beam assisted technology
(IBAD method) has shown that the application in this
method of ion beams with the energy of several tens
keV leads to the distribution of implanted ions with
such energies and of point defects created by them in
the deposited coating are very nonuniform in depth [1].
As a consequence, the conditions, under which the coat-
ing structure nucleation occurs, will be different at the
initial stage and at the steady-state stage, although just
the peculiarities of coating formation at the first 1...10
nm determine, in many aspects, its adhesion characteris-
tics on the whole. In works, aimed to the study of initial
stages of coating formation [2-5], is shown that the ion
bombardment in the course of deposition leads to the
cardinal changing in the mechanism of film nucleation
and growth. The results obtained evidence that the ion
bombardment influences on the density of nuclei being
formed, their size, crystallographic structure of the coat-
ing and its texture.
In the above-mentioned works the ions of inert gases
- argon and neon were used as bombarding particles.
Their role in formation of the coating structure at the
initial stage consists mainly in stimulation of diffusion
processes due to the radiation effect. In the process of
production of wear resistant and hardening coating one
uses, first of all, the ions of active elements -nitrogen,
carbon, oxygen, boron. Bombardment with ions of such
a kind should influence not only on the structure of the
coating being formed, but also on its phase composition.
The goal of the present investigation consisted in the
comparative study of the peculiarities of chromium
coating formation at the initial stage (thicknesses of
1...10 nm), without ion-beam assisted irradiation and
under conditions of bombardment with nitrogen ions of
30 keV energy at a temperature 200 °C.
EXPERIMENTAL PROCEDURE
Experiments were carried out at the assembly Argo-
1 for ion beam assisted deposition [1]. Chromium was
deposited onto the NaCl substrate, which was prelimi-
nary coated with a carbon layer. The evaporation pro-
cess was controlled with he use of an electro-resistive
transducer. All the substrate area was arbitrary separated
into four parts, each of which was successively covered
with a blind at regular time intervals. The deposition
stopped after appearance of the electrical conduction at
the transducer.
Simultaneously with deposition, one part of the sub-
strate was bombarded with 30 keV nitrogen ions at the
dose production rate of 2·1014 ions/сm2.s. The second
part was covered against the ion beam action. The rate
of chromium deposition was maintained rather low,
0.1…0.15 nm/s. The exposition time was selected so
that each of four parts was irradiated up to doses 1.2,
2.4, 3.6, 4.8·1016 ions/сm2 respectively. Before the ex-
periment, the working chamber was evacuated up to the
pressure of 5.10-4 Pа. In the course of the experiment the
vacuum in the working chamber was worsened up to
4·10-3 Pа at the expense of nitrogen leakage from the
discharge chamber of the ion source. The substrate tem-
perature was 200 °C.
After fulfillment of the experiment, the carbon film
together with deposited chromium was separated from
the substrate and examined in the electron microscope
JEM-100CX.
RESULTS AND DISCUSSION
_________________________________________________________________________________
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2006. № 4.
Серия: Физика радиационных повреждений и радиационное материаловедение (89), с. 200-203.
200
In the process of ion beam assisted deposition at the
surface and inside of the substrate the complex physical-
mechanical phenomena occur related to the modifica-
tion of the structure and the component composition
of the substrate itself, as well as, to the coating building
up. Most part of the primary processes, occurring in this
case, is described in [6]. Taking into account low rates
of chromium deposition, being used in our investiga-
tion, and a relatively high nitrogen pressure in the work-
ing chamber is should be expected that in the process of
coating build up the most part of nitrogen molecules
will be captured by the atomic-molecular chromium
flow. In order to study the influence of the residual at-
mosphere on the chromium coating structure, a part of
the substrate in the course of the experiment was
screened from the ion beam by the fixed blind.
Table 1
The interplanar distances for chromium films as deposited without ion bombardment
HKL h ≈ 3 nm, 4·10-3 Pa h ≈ 90 nm, 4·10-3 Pa h ≈ 90 nm, 5·10-4 Pa
Cr hcp, 10.0 0.278
Cr hcp, 00.2 0,253
Cr hcp, 10.1 0,237
Cr hcp, 10.2 0,209
Cr bcc, 110 0,203 0,206
Cr hcp, 11.0 0,188
Cr hcp, 10.3 0,162
Cr hcp, 20.0 0,147
Cr bcc, 200 0,140 0,144
Cr hcp, 11.2 0,139
Cr bcc, 211 0,115 0,118
Cr bcc, 220 0,096 0,101
Cr bcc, 310 0,089 0,092
a b
Fig. 1. Diffraction patterns for non-assisted
chromium deposition: h ≈ 8…10 nm (a); h ≈90 nm (b)
Table 1 presents the interplanar distances obtained
after counting the electron diffraction patterns of the
chromium film deposited without ion beam assistance.
Analysis has shown that at the initial stage of deposition
there formed are hcp chromium structures with the pa-
rameters: a=0,325 nm, c=0,512 nm. The hcp phase re-
mains stable up to the thicknesses from 20 to 30 nm at
which the film becomes continuous. In the same table
are given the results of structure analysis of the chromi-
um coating, with the thickness exceeding 50 nm. It is
seen that the hcp structure is transformed in the bcc
structure. Here also the interplanar distances of the bcc
phase of chromium deposited at an initial pressure of
5·10-4 Pa are given.
The electron-microscopic images and the electron-
diffraction photographs of chromium films are present-
ed in fig. 1a, b. The “thickness” of the first of them cor-
responds to the thickest of four covered parts of the sub-
strate (≈ 8…10 nm), the thickness of the second one is
90 nm. In fig. 2 given are the histograms of nuclei grain
distribution by sizes in the films deposited on each of
four areas of the substrate. It is seen, that as the film
thickness increases, the maximum position gradually
shifts towards large sizes.
The interplanar distances of the crystalline structure
being formed in the process of chromium deposition un-
der ion bombardment are given in Table 2. Analysis has
shown that the dominant phase at the initial stage of de-
position is chromium nitride CrN (Fig. 3,a). Later on,
while forming the continuous coating and increasing its
thickness, the nucleation of chromium grains was ob-
served. At thicknesses higher than 50 nm (Fig. 3,b) the
material structure looks as a mix of Cr and CrN nano-
size grains, the size of which does not exceed 10 nm.
0 2 4 6 8 10
0
10
20
30
40
50
%
nm 0 2 4 6 8 10
0
10
20
30
40
50
%
nm 0 2 4 6 8 10
0
10
20
30
40
%
nm
0 2 4 6 8 10
0
10
20
30
40
%
nm
_________________________________________________________________________________
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2006. № 4.
Серия: Физика радиационных повреждений и радиационное материаловедение (89), с. 200-203.
201
1 2 3 4
Fig. 2. Evolution of chromium cluster density as deposited without ion bombardment
The histograms of CrN grain distribution and the
percentage of substrate surface coverage for different
deposition times are presented in fig. 4. The material
structure at the given stage looks as a system of grain
nuclei, the distribution function of which changes with
deposition time and irradiation dose increasing. If for
the first two films a monodimensional distribution with
a rather narrow peak in the range of sizes ≈2…3 nm is
characteristic, then, beginning already from the third
film, the appearance of nuclei with a size of ≈ 5…8 nm
is observed. This tendency manifests most distinctly in
the fourth film. It should be noted, that the increase of
the main grain size occurs not at the expense of peak
distribution shift towards large sizes, as it was observed
for films deposited without ion irradiation (see fig. 2),
but due to the appearance of the second peak in the area
of coarse nuclei. A number of small-sized nuclei remain
practically unchangeable. It means that we can speak
about the coalescence of fine grains into coarser ones
and about appearance of a new population of nuclei on
the free sites.
Table 2
The interplanar distances for chromium films as de-
posited with ion bombardment
HKL D bulk, nm h ≈ 3 nm h ≈ 50 nm
CrN, 111 0.240 0,238 0,235
CrN, 200 0,207 0,203 -
Cr, 110 0,205 - 0,207
Cr2N, 112 0,163 - 0,161
CrN, 220 0,147 0,145 0,144
CrN, 311 0,126 - 0,128
Cr, 211 0,117 - 0,117
CrN 400 0,104 - 0,102
a b
Fig. 3. Diffraction patterns for ion-assisted chromium
deposition: a – h ≈ 8…10 nm; b – h ≈90 nm
So, the investigation performed showed, on the one
hand, that the existence of the increased nitrogen con-
tent in the residual atmosphere, in combination with the
low chromium deposition rate, leads to the formation, at
the initial stage, of a hcp structure being no characteris-
tic for the “bulk” chromium. The ion beam assisted de-
position stimulates the nucleation of a nanocrystalline
structure of chromium nitride CrN. At the initial stage,
the forming of such a structure proceeds via the process
of nucleation and coalescence.
In the scientific literature the polymorphism is often
described by researchers, which studied the formation of
thin films at the stage of their nucleation. As a rule,
there occurs the formation of crystallographic structures
packed closer than these observed in the “bulk” materi-
al. In the case of chromium one observed the formation
of a hcp structure or a complex cubic structure [7, 8].
This phenomenon was explained in work [8] where the
authors have supposed a changing of thermodynamic
equilibrium conditions in thin films.
Chromium deposition at the increased nitrogen con-
tent in the working chamber occurs under conditions of
continuous absorption of nitrogen molecules by the sub-
strate surface. And the rate of nitrogen absorption high-
er by several folds than the rate of chromium condensa-
tion. The nitrogen dissociation energy is rather high,
205,5 kcal/mol. [9], and therefore nitrogen dissociation
and formation of a chemical compound with chromium
is improbable. Its blocking on the substrate surface
seems more probable. Under such conditions, even
though the deposition occurs at increased temperature,
the surface diffusion of chromium adatoms to the grain
nuclei is hampered. Thus, the main mechanism of grain
growth will be the grain build-up at the expense of va-
por deposition. The growth at the expense of surface
diffusion will be less preferential. As a result, a mass
nucleation of grains takes place.
0 2 4 6 8 10
0
15
30
45
%
nm 0 2 4 6 8 10
0
15
30
45
%
nm
1 2
_________________________________________________________________________________
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2006. № 4.
Серия: Физика радиационных повреждений и радиационное материаловедение (89), с. 200-203.
202
0 2 4 6 8 100
10
20
%
nm
0 2 4 6 8 100
10
20
30
%
nm
3 4
Fig. 4. Evolution of chromium cluster density
as deposited with ion bombardment
If chromium is deposited under conditions of irradia-
tion with nitrogen ions, then the mechanism of nucle-
ation is appreciably changing. At the initial stage of film
deposition the most important will be the influence of
ion bombardment on desorption of gas molecules, on
sputtering of chromium atoms, on their mobility. Fur-
thermore, it should be noticed once more phenomenon
not described in work [6], namely, ion-stimulated disso-
ciation of nitrogen molecules being sputtered and a sub-
sequent repeated nitrogen sorption on the substrate, but
then in the atomic form. Just atomic nitrogen undergoes
a reaction with chromium resulting in formation of
chromium nitride CrN.
So, the mechanism of chromium coating nucleation
under bombardment with nitrogen ions can be presented
as follows. The ion beam destroys the layers of sorbed
gas molecules, including nitrogen, and creates, on the
one hand, an increased concentration of defects on the
substrate surface, and thus forms conditions for more in-
tensive nucleation of chromium grains, on the second
hand, it creates, at the expense of nitrogen molecule dis-
sociation, preconditions for sorbing nitrogen in the
atomic form, and, on the third hand, it stimulates a sur-
face diffusion of both the chromium atoms and the ni-
trogen atoms. The latter process leads to the formation
of chromium nitrides CrN.
CONCLUSIONS
The comparative investigation of initial stages of
chromium coating formation at 200 °C under condition
of the increased nitrogen content in the working cham-
ber and of assisted irradiation with 30 keV nitrogen ions
has shown that the nitrogen presence leads to changing
in the mechanism of chromium deposition and creates
preconditions for the formation of a nonequilibrium hcp
structure, which transforms into the bcc structure with
film thickness increasing. Bombardment of the chromi-
um film during deposition with nitrogen ions initiates a
sputtering of adsorbed nitrogen molecules and their dis-
sociation. During the secondary sorption of nitrogen in
the atomic state the ion irradiation stimulates surface
diffusion of both the chromium atoms and the nitrogen
atoms. The results of the action of the above-mentioned
processes is the formation of a chemical compound in
the form of CrN nuclei, their surface diffusion with sub-
sequent coalescence leading to the formation of a
nanocrystalline structure of chromium nitride CrN hav-
ing a grain size of ≈ 3…5 nm.
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3.N. Georgiev and D. Dobrev //Thin Solid Films. 1990,
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4.M. Marinov //Thin Solid Films. 1977, v. 46, p. 267.
5.D. Dobrev //Thin Solid Films. 1982, v. 92, p. 41.
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1952, LXXXVII, N2, p. 215 (in Russian).
9.V.S. Kogan, Y.E. Semenenko, A.L. Seryugin //Fiz.
Chim. Obr. Mater (in Russian) 1980, v. 5, p. 97.
ФОРМИРОВАНИЕ ТОНКОПЛЕНОЧНОГО Cr-N-КОМПОЗИТА В УСЛОВИЯХ ИОННОЙ БОМ-
БАРДИРОВКИ И НИЗКИХ СКОРОСТЕЙ ОСАЖДЕНИЯ ХРОМА
А. Гугля, М. Литвиненко, Ю. Марченко, Р. Василенко
Проведено сравнительное исследование начальных стадий формирования хромового покрытия в условиях бомбар-
дировки ионами азота с энергией 30 кэВ и без ассистированного облучения, но при повышенном содержании азота в ра-
бочей камере. Скорости осаждения были выбраны небольшими – 0,05...0,1 нм/с. Вакуум в камере был на уровне 4·10-3
Па и определялся в основном азотом, который напускался в разрядную камеру ионного источника. Толщина исследуе-
мых объектов была в интервале 3…10 нм. Результаты показали, что при ионной бомбардировке происходит образование
нитрида хрома CrN, начиная с самых ранних стадий роста пленки. Размер видимых зародышей находится в диапазоне
1…4 нм, плотность – 3·1012 см-2. С увеличением толщины пленки происходит коалесценция малых зародышей, образова-
ние свободных зон и зарождение на них новой популяции зерен. Осаждение хрома без ионного облучения приводит к
формированию ГПУ-структуры с параметрами решетки а=0,315 нм и с=0,492 нм. При достижении сплошности у пленки
происходит трансформация ГПУ-структуры в ОЦК с параметром а=0,261 нм.
ФОРМУВАННЯ ТОНКОПЛІВКОВОГО КОМПОЗИТУ Сr-N В УМОВАХ ІОННОГО БОМБАРДУ-
ВАННЯ ТА НИЗЬКИХ ШВИДКОСТЕЙ ОСАДЖЕННЯ ХРОМУ
О. Гугля, М. Литвиненко, Ю. Марчєнко, Р. Василенко
_________________________________________________________________________________
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2006. № 4.
Серия: Физика радиационных повреждений и радиационное материаловедение (89), с. 200-203.
203
Проведено порівняльне вивчення початкової стадії формування хромового покриття в умовах бомбардування
іонами азоту з енергією 30 кеВ та без асистуючого опромінення, але при підвищеному тиску азоту. Швидкості
осадження були підібрані невеликі – 0,05…0,1 нм/с. Вакуум у камері був на рівні 4·10-3 Па та обумовлювався азотом,
який напускався в розрядову камеру іонного джерела. Товщина досліджених плівок – 3…10 нм. Результати показали, що
при іонному бомбардуванні має місце створення нітриду хрому CrN починаючи з самих початкових стадій. Розмір
зародків знаходиться у діапазоні 1…4 нм, щільність – 3·1012 см-2. Зі збільшенням товщини має місце коалесценція
зародків, створення вільних зон та зародження на них нової популяції зерен. Осадження хрому без іонного опромінення
призводить до формування ГПУ-структури хрому з параметрами гратки а=0,315 нм та с=0,492 нм. При появленні
сполошної плівки має місце трансформування ГПУ-структури у ОЦК з параметром а=0,261нм.
_________________________________________________________________________________
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2006. № 4.
Серия: Физика радиационных повреждений и радиационное материаловедение (89), с. 200-203.
204
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