Influence of radiation-induced defects on CdTe and CdZnTe detectors properties
The correlation between radiation-induced defects, arising in CdTe:Cl and CdZnTe after the hard X-ray irradiation, and charges collection efficiency of detectors based on these materials has been investigated by means of computer simulation method. The role of radiation-induced defects during degrad...
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Date: | 2015 |
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Main Author: | |
Format: | Article |
Language: | English |
Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2015
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Series: | Вопросы атомной науки и техники |
Subjects: | |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/82434 |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Influence of radiation-induced defects on CdTe and CdZnTe detectors properties / A.I. Kondrik // Вопросы атомной науки и техники. — 2015. — № 2. — С. 18-24. — Бібліогр.: 19 назв. — англ. |