Influence of radiation-induced defects on CdTe and CdZnTe detectors properties

The correlation between radiation-induced defects, arising in CdTe:Cl and CdZnTe after the hard X-ray irradiation, and charges collection efficiency of detectors based on these materials has been investigated by means of computer simulation method. The role of radiation-induced defects during degrad...

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Bibliographic Details
Date:2015
Main Author: Kondrik, A.I.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2015
Series:Вопросы атомной науки и техники
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/82434
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Influence of radiation-induced defects on CdTe and CdZnTe detectors properties / A.I. Kondrik // Вопросы атомной науки и техники. — 2015. — № 2. — С. 18-24. — Бібліогр.: 19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine