Structural transformation in C/Si multilayer after annealing
Amorphous C/Si multilayers were prepared by DC magnetron sputtering technique and investigated by transmission electron microscopy and low-angle x-ray diffraction methods after annealing at 650 and 950 °C. The amorphous interlayers of 0.5 − 0.6 nm thick were found at C/Si and Si/C interfaces bein...
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| Datum: | 2012 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Науковий фізико-технологічний центр МОН та НАН України
2012
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| Schriftenreihe: | Физическая инженерия поверхности |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/98978 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Structural transformation in C/Si multilayer after annealing / I.O. Zhuravel, Ye.A. Bugayev, L.E. Konotopsky, E.M. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Физическая инженерия поверхности. — 2012. — Т. 10, № 3. — С. 314–318. — Бібліогр.: 13 назв. — англ. |