Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures
The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation improves electrophysical parameters o...
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| Date: | 2007 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The results of experiments on the influence of recharging the electron traps in
a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon
in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation
improves electrophysical parameters of the transition layer. |
|---|