Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface

Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface

Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge nanoislands grown on Si(100) surface were investigated using photocurrent spectroscopy. The mechanism of photoconductivity was discussed. It was shown that electron transitions from the ground state of the valence band...

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Bibliographic Details
Date:2014
Main Authors: Melnichuk, Ye.Ye., Hyrka, Yu.V., Kondratenko, S.V., Kozyrev, Yu.N., Lysenko, V.S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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