Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon
. Nanostructured silicon layers (3–60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm2 ), multicrystalline and metallurgical silicon by stain etching. We studied optical and structural properties of nanostructured silicon using scanning tunnel micro...
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| Datum: | 2012 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon / A.I. Luchenko, M.M. Melnichenko, K.V. Svezhentsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 333-337. — Бібліогр.: 6 назв. — англ. |