Efficiency limit for diffusion silicon solar cells at concentrated illumination
A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge c...
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| Datum: | 1999 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ. |