Photo-enchanced defect reactions in CdS:Ag crystals

Two reversible photo-enhanced defect reactions proceeding under visible light illumination have been found in CdS:Ag crystals. The first process leads to the increase of crystal photosensitivity, which has been shown to be caused by creation of "sensitizing" recombination centres. The seco...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Datum:2002
Hauptverfasser: Khomenkova, L.Yu., Markevich, I.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Photo-enchanced defect reactions in CdS:Ag crystals / L.Yu. Khomenkova, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 264-267. — Бібліогр.: 13 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine