Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals
The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained...
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| Datum: | 2016 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ. |