Transient mode features at sapphire growing by horizontal directional crystallization
The behavior of the crystal/alumina melt boundary has been studied at the start and final stages of sapphire growing by horizontal directional crystallization. At a constant pulling speed of the crystal into the cold zone, the time dependence of the melt crystallization rate may behave nonmonotonica...
Збережено в:
| Дата: | 2009 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2009
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| Назва видання: | Functional Materials |
| Теми: | |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Transient mode features at sapphire growing by horizontal directional crystallization // S.V. Barannik, V.N. Kanischev, S.V. Nizhankovsky, A.M. Stepanenko // Functional Materials. — 2009. — Т. 16, № 4. — С. 498-500. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The behavior of the crystal/alumina melt boundary has been studied at the start and final stages of sapphire growing by horizontal directional crystallization. At a constant pulling speed of the crystal into the cold zone, the time dependence of the melt crystallization rate may behave nonmonotonically. The crystallization front oscillations in the initial transient process that was predicted by numerical simulation has been confirmed experimentally. |
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