Transient mode features at sapphire growing by horizontal directional crystallization
The behavior of the crystal/alumina melt boundary has been studied at the start and final stages of sapphire growing by horizontal directional crystallization. At a constant pulling speed of the crystal into the cold zone, the time dependence of the melt crystallization rate may behave nonmonotonica...
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Datum: | 2009 |
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Hauptverfasser: | Barannik, S.V., Kanischev, V.N., Nizhankovsky, S.V., Stepanenko, A.M. |
Format: | Artikel |
Sprache: | English |
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НТК «Інститут монокристалів» НАН України
2009
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Schriftenreihe: | Functional Materials |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Transient mode features at sapphire growing by horizontal directional crystallization // S.V. Barannik, V.N. Kanischev, S.V. Nizhankovsky, A.M. Stepanenko // Functional Materials. — 2009. — Т. 16, № 4. — С. 498-500. — Бібліогр.: 6 назв. — англ. |
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