Influence of impurity on electronic transition in coherent-strained quantum dot

The influence of impurity on energy breadth of an optical gap for quantum dot is studied within the framework of deformation potential model. It is established that with size increase of a quantum dot with an ionization donor dopant an optical gap diminishes. For smaller radiuses (R₀ ~ 40 Å ÷...

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Bibliographic Details
Date:2006
Main Authors: Dan'kiv, O.O., Peleshchak, R.M.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2006
Series:Functional Materials
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Influence of impurity on electronic transition in coherent-strained quantum dot / O.O. Dan'kiv, R.M. Peleshchak // Functional Materials. — 2006. — Т. 13, № 1. — С. 14-20. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine