Silicon carbide defects and luminescence centers in current heated 6H-SiC

Silicon carbide defects and luminescence centers in current heated 6H-SiC

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Bibliographic Details
Date:	2010
Main Authors:	S. W. Lee, S. I. Vlaskina, V. I. Vlaskin, I. V. Zaharchenko, V. A. Gubanov, G. N. Mishinova, G. S. Svechnikov, V. E. Rodionov, S. A. Podlasov
Format:	Article
Language:	English
Published:	2010
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000349120
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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