Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys

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Datum:2019
1. Verfasser: A. M. Vora
Format: Artikel
Sprache:English
Veröffentlicht: 2019
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0001073663
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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-227462024-02-26T22:24:32Z Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys A. M. Vora 1560-8034 2019 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0001073663 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
A. M. Vora
Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys
format Article
author A. M. Vora
author_facet A. M. Vora
author_sort A. M. Vora
title Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys
title_short Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys
title_full Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys
title_fullStr Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys
title_full_unstemmed Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys
title_sort pseudopotential-based study of electrical transport properties inherent to bi-ga alloys
publishDate 2019
url http://jnas.nbuv.gov.ua/article/UJRN-0001073663
work_keys_str_mv AT amvora pseudopotentialbasedstudyofelectricaltransportpropertiesinherenttobigaalloys
first_indexed 2025-07-17T13:59:44Z
last_indexed 2025-07-17T13:59:44Z
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