APA (7th ed.) Citation

Krasko, M. M., Kolosiuk, A. H., Voitovych, V. V., Povarchuk, Y., & Rohutskyi, I. S. (2018). Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing.

Chicago Style (17th ed.) Citation

Krasko, M. M., A. H. Kolosiuk, V. V. Voitovych, Yu Povarchuk, and I. S. Rohutskyi. Influence of Divacancy-oxygen Defects on Recombination Properties of N-Si Subjected to Irradiation and Subsequent Annealing. 2018.

MLA (8th ed.) Citation

Krasko, M. M., et al. Influence of Divacancy-oxygen Defects on Recombination Properties of N-Si Subjected to Irradiation and Subsequent Annealing. 2018.