Krasko, M. M., Kolosiuk, A. H., Voitovych, V. V., Povarchuk, Y., & Rohutskyi, I. S. (2018). Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing.
Chicago-Zitierstil (17. Ausg.)Krasko, M. M., A. H. Kolosiuk, V. V. Voitovych, Yu Povarchuk, und I. S. Rohutskyi. Influence of Divacancy-oxygen Defects on Recombination Properties of N-Si Subjected to Irradiation and Subsequent Annealing. 2018.
MLA-Zitierstil (8. Ausg.)Krasko, M. M., et al. Influence of Divacancy-oxygen Defects on Recombination Properties of N-Si Subjected to Irradiation and Subsequent Annealing. 2018.
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