Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2

Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2

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Bibliographische Detailangaben
Datum:	2018
Hauptverfasser:	D. I. Bletskan, V. V. Frolova
Format:	Artikel
Sprache:	English
Veröffentlicht:	2018
Schriftenreihe:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:	http://jnas.nbuv.gov.ua/article/UJRN-0000941355
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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