Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
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| Date: | 2017 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
2017
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| Series: | Ukrainian journal of physics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000703699 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |