The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

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Bibliographic Details
Date:2011
Main Authors: G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko
Format: Article
Language:English
Published: 2011
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000349498
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS