The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

Gespeichert in:
Bibliographische Detailangaben
Datum:2011
Hauptverfasser: G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko
Format: Artikel
Sprache:English
Veröffentlicht: 2011
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000349498
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-96142
record_format dspace
spelling open-sciencenbuvgovua-961422024-04-17T17:25:04Z The kinetic of point defect transformation during the annealing process in electron-irradiated silicon G. P. Gaidar A. P. Dolgolenko P. G. Litovchenko 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349498 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
G. P. Gaidar
A. P. Dolgolenko
P. G. Litovchenko
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
format Article
author G. P. Gaidar
A. P. Dolgolenko
P. G. Litovchenko
author_facet G. P. Gaidar
A. P. Dolgolenko
P. G. Litovchenko
author_sort G. P. Gaidar
title The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_short The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_full The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_fullStr The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_full_unstemmed The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
title_sort kinetic of point defect transformation during the annealing process in electron-irradiated silicon
publishDate 2011
url http://jnas.nbuv.gov.ua/article/UJRN-0000349498
work_keys_str_mv AT gpgaidar thekineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon
AT apdolgolenko thekineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon
AT pglitovchenko thekineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon
AT gpgaidar kineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon
AT apdolgolenko kineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon
AT pglitovchenko kineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon
first_indexed 2025-07-22T14:07:35Z
last_indexed 2025-07-22T14:07:35Z
_version_ 1838356754946064384