Changes in Hall parameters after -irradiation (60So) of n-Ge
Saved in:
Date: | 2011 |
---|---|
Main Author: | G. P. Gaidar |
Format: | Article |
Language: | English |
Published: |
2011
|
Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000349739 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge
by: Gaidar, G.P.
Published: (2011) -
Influence of -irradiation (60So) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
by: G. P. Gaidar
Published: (2012) -
Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb
by: G. P. Gaidar
Published: (2014) -
Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>
by: Gaidar, G.P.
Published: (2014) -
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
by: Gaidar, G.P.
Published: (2012)