Модифікація оптичних властивостей пористих шарів напівпровідників AIIIBV, отриманих методом анодного травлення
Morphology investigations (atomic force microscopy (AFM) and scanning electron microscopy (SEM)), study of Raman scattering (RS) and photoluminescence (PL) have been performed to characterize a series of AIIIBV materials (GaAs, GaP, InP) with an electrochemically prepared porous surface layer. It ha...
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| Date: | 2012 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2012
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021325 |
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| Journal Title: | Ukrainian Journal of Physics |