Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures

von Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
Veröffentlicht 2002

A universal automated complex for control and diagnostics of semiconductor devices and structures

von Konakova, R.V., Rengevych, O.E., Kurakin, A.M., Kudryk, Ya.Ya.
Veröffentlicht 2002

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices

von Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
Veröffentlicht 2003

Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

von Konakova, R.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Veröffentlicht 2014

Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features

von Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.
Veröffentlicht 2005

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

von Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Veröffentlicht 2002

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

von Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Veröffentlicht 2014

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts

von Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.
Veröffentlicht 2010

The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment

von Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.
Veröffentlicht 2008

Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures

von Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.
Veröffentlicht 2002

Optically controlled 2D tunnelling in GaAs delta-doped p-n junction

von Vitusevich, S. A., Forster, A., Belyaev, A. E., Glavin, B. A., Indlekofer, K. M., Luth, H., Konakova, R. V.
Veröffentlicht 1999

Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films

von Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.
Veröffentlicht 2012

Оптичнi властивостi епiтаксiйних плiвок GaN, що перебували пiд дiєю мiкрохвильового опромiнення

von Belyaev, A. E., Klyui, N. I., Konakova, R. V., Luk’yanov, A. M., Sveshnikov, Yu. M., Klyui, A. M.
Veröffentlicht 2018

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

von Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.
Veröffentlicht 2011

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

von Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.
Veröffentlicht 2010

Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide

von Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.
Veröffentlicht 1999

Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment

von Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.
Veröffentlicht 2009

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Veröffentlicht 2001

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs

von Sorokin, V.M., Konakova, R.V., Kudryk, Ya.Ya., Zinovchuk, A.V., Bigun, R.I., Kudryk, R.Ya., Shynkarenko, V.V.
Veröffentlicht 2012

Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

von Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
Veröffentlicht 2001