Mechanism of 6H-3C transformation in SiC

von Vlaskina, S.I.
Veröffentlicht 2002

Silicon carbide LED

von Vlaskina, S.I.
Veröffentlicht 2002

Nanocrystalline silicon carbide films for solar cells

von Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2016

Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

von Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2014

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2015

External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2015

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2016

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2015

3C-6H transformation in heated cubic silicon carbide 3C-SiC

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2011

Flexible electroluminescent panels

von Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2007

Boron, aluminum, nitrogen, oxygen impurities in silicon carbide

von Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2007

Nanostructures in lightly doped silicon carbide crystals with polytypic defects

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2014

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht 2013

Silicon carbide phase transition in as-grown 3C-6H polytypes junction

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.
Veröffentlicht 2013

Electrophysical сharacteristics of LEDs based on GaN epitaxial films

von Oleksenko, P.Ph., Sukach, G.A., Smertenko, P.S., Vlaskina, S.I., Bogoslovskaya, A.B., Spichak, I.O., Shin, D.H.
Veröffentlicht 1998

Silicon carbide defects and luminescence centers in current heated 6H-SiC

von Lee, S.W., Vlaskina, S.I., Vlaskin, V.I., Zaharchenko, I.V., Gubanov, V.A., Mishinova, G.N., Svechnikov, G.S., Rodionov, V.E., Podlasov, S.A.
Veröffentlicht 2010

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht 2004