The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. I...
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| Date: | 2011 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117707 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ. |