Peculiarities of charge carriers transport in submicron Si-Ge whiskers
The paper presents an analysis of impact of charge carriers transport mechanisms on the thermoelectric properties of Si-Ge submicron whiskers. Based on the resistance temperature dependences the value of activation energy for conduction submicron designs was estimated and compared with the ones for...
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| Date: | 2014 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2014
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| Series: | Functional Materials |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119084 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Peculiarities of charge carriers transport in submicron Si-Ge whiskers / A.A.Druzhinin, A.P.Dolgolenko, I.P.Ostrovskii, Yu.N.Khoverko, S.I.Nichkalo, Iu.R.Kogut // Functional Materials. — 2015. — Т. 22, № 1. — С. 27-33. — Бібліогр.: 18 назв. — англ. |