AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers

Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology during different steps of LPE growth was studied using scanning probe microscopy....

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Bibliographic Details
Date:2000
Main Authors: Beketov, G.V., Rashkovetskiy, L.V., Rengevych, O.V., Zhovnir, G.I.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120233
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers / G.V. Beketov, L.V. Rashkovetskiy, O.V. Rengevych, G.I. Zhovnir // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 45-51. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine