Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer
The recombination of non-equilibrium charge carriers injected into n-Ge sample through an intermediate defect layer has been studied in experiment as well as theoretically. The structure defects were formed by cyclic straining with simultaneous ultrasonic irradiation of the sample at 310 K. Distribu...
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| Datum: | 2005 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2005
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/139745 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer / V. Nadtochiy, N. Golodenko, N. Nechvolod // Functional Materials. — 2005. — Т. 12, № 1. — С. 45-50. — Бібліогр.: 12 назв. — англ. |