The annealing of high - level doped materials on the base of the n – and p – Si₀.₇ Ge₀.₃ solid solution under reactor irradiation
N- and p-type samples of Si-Ge solid solution with the resistivity of (4...7) 10⁻³⋅ Ohm·cm, unannealed after high-temperature baking have been investigated. Samples were irradiated up to the fluence ~10²⁰ n⁰·cm⁻² in reactor active zone at the temperature ~500 ºC in mixed neutron field. It has b...
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| Date: | 2006 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2006
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| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/80147 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The annealing of high - level doped materials on the base of the n – and p – Si₀.₇ Ge₀.₃ solid solution under reactor irradiation / A.P. Dolgolenko // Вопросы атомной науки и техники. — 2006. — № 4. — С. 65-70. — Бібліогр.: 20 назв. — англ. |