Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
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Date: | 2018 |
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Main Authors: | M. M. Krasko, A. H. Kolosiuk, V. V. Voitovych, Yu. Povarchuk, I. S. Rohutskyi |
Format: | Article |
Language: | English |
Published: |
2018
|
Series: | Ukrainian Journal of Physics |
Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000940845 |
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Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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