Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
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| Datum: | 2018 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
2018
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| Schriftenreihe: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000941355 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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open-sciencenbuvgovua-298622024-02-27T21:57:45Z Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 D. I. Bletskan V. V. Frolova 1560-8034 2018 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000941355 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics D. I. Bletskan V. V. Frolova Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| format |
Article |
| author |
D. I. Bletskan V. V. Frolova |
| author_facet |
D. I. Bletskan V. V. Frolova |
| author_sort |
D. I. Bletskan |
| title |
Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_short |
Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_full |
Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_fullStr |
Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_full_unstemmed |
Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_sort |
influence of intrinsic point defects and substitutional impurities (cl, i-s) on the electronic structure of 2h-sn2 |
| publishDate |
2018 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000941355 |
| work_keys_str_mv |
AT dibletskan influenceofintrinsicpointdefectsandsubstitutionalimpuritiesclisontheelectronicstructureof2hsn2 AT vvfrolova influenceofintrinsicpointdefectsandsubstitutionalimpuritiesclisontheelectronicstructureof2hsn2 |
| first_indexed |
2025-07-17T15:45:00Z |
| last_indexed |
2025-07-17T15:45:00Z |
| _version_ |
1837909811611566080 |