New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
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| Datum: | 2017 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
2017
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| Schriftenreihe: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000741624 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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open-sciencenbuvgovua-372152024-02-29T11:36:03Z New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures V. L. Borblik Yu. M. Shwarts M. M. Shwarts A. B. Aleinikov 1560-8034 2017 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000741624 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics V. L. Borblik Yu. M. Shwarts M. M. Shwarts A. B. Aleinikov New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| format |
Article |
| author |
V. L. Borblik Yu. M. Shwarts M. M. Shwarts A. B. Aleinikov |
| author_facet |
V. L. Borblik Yu. M. Shwarts M. M. Shwarts A. B. Aleinikov |
| author_sort |
V. L. Borblik |
| title |
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_short |
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_full |
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_fullStr |
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_full_unstemmed |
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_sort |
new evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| publishDate |
2017 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000741624 |
| work_keys_str_mv |
AT vlborblik newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures AT yumshwarts newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures AT mmshwarts newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures AT abaleinikov newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures |
| first_indexed |
2025-07-17T18:32:20Z |
| last_indexed |
2025-07-17T18:32:20Z |
| _version_ |
1837920334810972160 |