Development and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range

by Zorenko, A.V., Kudryk, Ya.Ya., Marunenko, Yu.V.
Published 2011

Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors

by Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.
Published 2015

Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors

by Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.
Published 2015

A universal automated complex for control and diagnostics of semiconductor devices and structures

by Konakova, R.V., Rengevych, O.E., Kurakin, A.M., Kudryk, Ya.Ya.
Published 2002

Hybrid-integrated version of SBD amplitude detector intended for the 400–600 GHz frequency range

by Zorenko, A.V., Bychok, A.V., Shynkarenko, V.V., Kudryk, Ya.Ya., Slipokurov, V.S.
Published 2014

Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics

by Kudryk, Ya.Ya., Shynkarenko, V.V., Slipokurov, V.S., Bigun, R.I., Kudryk, R.Ya.
Published 2014

Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features

by Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.
Published 2005

Degradation processes in LED modules

by Sorokin, V.M., Kudryk, Ya.Ya., Shynkarenko, V.V., Kudryk, R.Ya., Sai, P.O.
Published 2016

Hybrid-integrated version of solid-state components for terahertz frequency region

by Zorenko, O.V., Bychok, A.V., Kryts’ka, T.V., Kudryk, Ya.Ya., Shynkarenko, V.V.
Published 2014

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts

by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.
Published 2010

A subharmonic mixer for the 220–325 GHz frequency range

by Zorenko, A.V., Kolesnik, N.V., Kritskaya, T.V., Kudryk, Ya.Ya., Marunenko, Yu.V., Ryzhanovich, L.P.
Published 2013

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.
Published 2011

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs

by Sorokin, V.M., Konakova, R.V., Kudryk, Ya.Ya., Zinovchuk, A.V., Bigun, R.I., Kudryk, R.Ya., Shynkarenko, V.V.
Published 2012

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures

by Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.
Published 2006

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.
Published 2008

A silicon carbide thermistor

by Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.
Published 2006

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity

by Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.
Published 2010

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.
Published 2007

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters

by Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.
Published 2004

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes

by Romanets, P.M., Belyaev, A.E., Sachenko, А.V., Boltovets, N.S., Basanets, V.V., Konakova, R.V., Slipokurov, V.S., Khodin, А.А., Pilipenko, V.А., Shynkarenko, V.V., Kudryk, Ya.Ya.
Published 2016