nvestigations of near dislocation clusters of point defects in CdZnTe crystals by using the Hall method under the ultrasound loading the crystals

von Ya. M. Olikh, M. D. Tymochko, N. V. Safriuk, M. I. Ilashchuk, Ya. Olikh
Veröffentlicht 2017

X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates

von N. V. Safriuk, G. V. Stanchu, A. V. Kuchuk, V. P. Kladko, A. E. Belyaev, V. F. Machulin
Veröffentlicht 2013

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient

von T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, Yo. Gudymenko, N. V. Safriuk
Veröffentlicht 2017

Preparation and study of the porous Si surfaces obtained by electrochemical method

von V. G. Lytovchenko, T. I. Gorbanyuk, V. P. Kladko, A. V. Sarikov, N. V. Safriuk, L. L. Fedorenko, S. Asmontas, J. Gradauskas, E. Sirmulis, O. Zalys
Veröffentlicht 2017

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios

von V. P. Kladko, N. V. Safriuk, H. V. Stanchu, A. V. Kuchuk, V. P. Melnyk, A. S. Oberemok, S. B. Kriviy, Z. V. Maksymenko, A. E. Belyaev, B. S. Yavich
Veröffentlicht 2014