New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures

New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures

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Bibliographic Details
Date:2017
Main Authors: V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov
Format: Article
Language:English
Published: 2017
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000741624
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-372152024-02-29T11:36:03Z New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures V. L. Borblik Yu. M. Shwarts M. M. Shwarts A. B. Aleinikov 1560-8034 2017 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000741624 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
V. L. Borblik
Yu. M. Shwarts
M. M. Shwarts
A. B. Aleinikov
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
format Article
author V. L. Borblik
Yu. M. Shwarts
M. M. Shwarts
A. B. Aleinikov
author_facet V. L. Borblik
Yu. M. Shwarts
M. M. Shwarts
A. B. Aleinikov
author_sort V. L. Borblik
title New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
title_short New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
title_full New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
title_fullStr New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
title_full_unstemmed New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
title_sort new evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
publishDate 2017
url http://jnas.nbuv.gov.ua/article/UJRN-0000741624
work_keys_str_mv AT vlborblik newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures
AT yumshwarts newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures
AT mmshwarts newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures
AT abaleinikov newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures
first_indexed 2025-07-17T18:32:20Z
last_indexed 2025-07-17T18:32:20Z
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