Optical and acoustical phonon modes in superlattices with SiGe QDs

von Yukhymchuk, V.O., Dzhagan, V.M., Klad’ko, V.P., Lytvyn, O.S., Machulin, V.F., Valakh, M.Ya., Yaremko, A.M., Milekhin, A.G., Krasil’nik, Z.F., Novikov, A.V., Mestres, N., Pascual, J.
Veröffentlicht 2004

Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass

von Mateleshko, N., Mitsa, V., Stronski, A., Veres, M., Koos, M., Andriesh, A.M.
Veröffentlicht 2004

Tunable high-finesse narrow bandpass Fabry – Perot filter

von Markov, V.B., Khizhnyak, A.I., Goren, V., Cook, W.B.
Veröffentlicht 2004

Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors

von Baranskii, P.I., Babich, V.M., Venger, E.F.
Veröffentlicht 2001

Crystallochemistry of defects in lead telluride films

von Freik, D.M., Ruvinskii, M.A., Ruvinskii, B.M., Galushchak, M.A.
Veröffentlicht 2001

Effect of surface condition on strain in semiconductor crystal sample

von Serdega, B.K., Nikitenko, E.V., Prikhodenko, V.I.
Veröffentlicht 2001

Electronic properties of silicon surface at different oxide film conditions

von Kirillova, S.I., Primachenko, V.E., Venger, E.F., Chernobai, V.A.
Veröffentlicht 2001

Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films

von Nesterenko, B.O., Kazantseva, Z.I., Stadnyk, O.A., De Rossi, D., Kalchenko, V.I.
Veröffentlicht 2001

Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well

von Korovin, A.V.
Veröffentlicht 2001

Electrical properties of macroporous silicon structures

von Karachevtseva, L.A., Lytvynenko, O.A., Malovichko, E.A., Sobolev, V.D., Stronska, O.J.
Veröffentlicht 2001

Activation of porous Si blue emission due to preanodization ion implantation

von Rozhin, A.G., Klyui, N.I., Litovchenko, V.G., Melnik, V.P., Romanyuk, B.N., Piryatinskii, Yu.P.
Veröffentlicht 2001

Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes

von Vlasenko, N.A., Kononets, Ya.F., Denisova, Z.L., Kopytko, Yu.V., Veligura, L.I., Soininen, El., Tornqvist, R.O., Vasama, K.M.
Veröffentlicht 2001

Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters

von Snopok, B.A., Kostyukevich, K.V., Lysenko, S.I., Lytvyn, P.M., Lytvyn, O.S., Mamykin, S.V., Zynyo, S.A., Shepelyavyj, P.E., Kostyukevich, S.A., Shirshov, Yu.M., Venger, E.F.
Veröffentlicht 2001

Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices

von Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.
Veröffentlicht 2001

Structural investigations of annealed ZnS:Cu, Ga film phosphors

von Lytvyn, O.S., Khomchenko, V.S., Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Prokopenko, I.V., Rodionov, V.Ye., Tzyrkunov, Yu.A.
Veröffentlicht 2001

Features of electrical charge transfer in porous silicon

von Monastyrskii, L.S.
Veröffentlicht 2001

Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

von Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
Veröffentlicht 2001

Increase of planar homogeneity of multi-silicon structures by gettering treatments

von Litovchenko, V.G., Efremov, A.A., Evtukh, A.A., Rassamakin, Yu.V., Klyui, M.I., Kostylov, V.P.
Veröffentlicht 2001

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

von Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.
Veröffentlicht 2001

Short-wave photodetectors based on fine grain-sized poly-Si films

von Agaev, F.G.
Veröffentlicht 2001